RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition
نویسندگان
چکیده
We present the design and operation of a specialized Atomic Layer Deposition (ALD) system, dedicated to stable isotopic tracing experiments oxide film growth, using isotopically labelled water as reactant. A small chamber volume allows with only very quantities vapor, minimising consumption water. The first results for growth ZnO TiO2 Diethlyzinc (DEZ) Tetrakis(dimethylamino)titanium (TDMAT) zinc titanium precursors, unlabelled reactant, are presented, establish conditions stoichiometric on silicon. Absolute compositions thickness determined by RBS NRA function vapor pulse duration, number ALD cycles substrate temperature. Physical is ellipsometry. obtained highly enriched in 18O also presented.
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ژورنال
عنوان ژورنال: Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
سال: 2021
ISSN: ['1872-9584', '0168-583X']
DOI: https://doi.org/10.1016/j.nimb.2020.12.015